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Negative Activation Energy of Gate Reliability in Schottky-Gate P-Gan HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

Manuel Fregolent, Mirco Boito, Michele Disaro,Carlo De Santi,Matteo Buffolo,Eleonora Canato, Michele Gallo,Cristina Miccoli,Isabella Rossetto,Giansalvo Pizzo,Alfio Russo,Ferdinando Iucolano,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2024）

Cited 0|Views10
Key words
p-GaN HEMT,gate Leakage current,reliability,electroluminescence
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