Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-Sic JBS Diodes after Neutron Irradiation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Carrier transport mechanism,C-V characterization,deep-level transient spectroscopy (DLTS),neutron irradiation,silicon carbide (SiC) junction barrier Schottky (JBS) diode,Carrier transport mechanism,C-V characterization,deep-level transient spectroscopy (DLTS),neutron irradiation,silicon carbide (SiC) junction barrier Schottky (JBS) diode
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