Two-dimensional-materials-based Transistors Using Hexagonal Boron Nitride Dielectrics and Metal Gate Electrodes with High Cohesive EnergyYaqing Shen,Kaichen Zhu,Yiping Xiao,Dominic Waldhoer, Abdulrahman H. Basher,Theresia Knobloch,Sebastian Pazos,Xianhu Liang,Wenwen Zheng,Yue Yuan,Juan B. Roldan,Udo Schwingenschloegl,He Tian,Huaqiang Wu,Thomas F. Schranghamer,Nicholas Trainor,Joan M. Redwing,Saptarshi Das,Tibor Grasser,Mario LanzaNATURE ELECTRONICS（2024）引用 2|浏览9AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
