An Intel 3 Advanced FinFET Platform Technology for High Performance Computing and SOC Product Applications
Walid M. Hafez, D. Abanulo, M. Abdelkader, S. An,C. Auth, D. Bahr, V. Balakrishnan, R. Bambery, M. Beck, M. Bhargava, S. Bhowmick, J. Biggs-houck, J. Birdsall, D. Caselli,H.-Y. Chang,Y. Chang, R. Chaudhuri, S. Chauhan, C. Chen,V. Chikarmane,K. Chikkadi,T. Chu,C. Connor, R. De Alba, Y. Deng, C. Destefano, D. Diana, Y. Dong, P. Elfick, Tyler Elko-Hansen, B. Fallahazad, Y. Fang, D. Gala, D. Garg, C. Geppert,S. Govindaraju, W. Grimm, H. Grunes, L. Guler, Z. Guo,A. Gupta,M. Hattendorf, S. Havelia, J. Hazra, A. Islam,A. Jain,S. Jaloviar,M. Jamil,M. Jang, M. Kabir, J. Kameswaran,Eric Karl, S. Kelgeri, A. Kennedy, C. Kilroy, J. Kim, Y. Kim, D. Krishnan, G. Lee, H.-P. Lee, Q. Li, H. Lin, A. Luk,Y. Luo, P. Macfarlane, A. Mamun, K. Marla, D. Mayeri, E. Mckenna, A. Miah,K. Mistry, M. Mleczko, S. Moon, D. Nardi,S. Natarajan, J. Nathawat, C. Nolph, C. Nugroho, P. Nyhus,A. Oni,P. Packan, D. Pak, A. Paliwal, R. Pandey, I. Paredes, K. Park,L. Paulson, A. Pierre,P. Plekhanov,C. Prasad,R. Ramaswamy, J. Riley,Johann Rode, R. Russell, S. Ryu, H. Saavedra, T. Salisbury, Justin Sandford, F. Shah,K. Shang, P. Shekhar, A. Shu, E. Skoug, J. Sohn, J. Song,M. Sprinkle, J. Su, A. Tan,T. Troeger, R. Tsao, A. Vaidya, C. Wallace, X. Wang, H. Wang, C. Ward, S. Wickramaratne, M. Wills, T. Wu, Z. Xia-hua, S. Xu,P. Yashar, J. Yaung, Y. Yu, M. Zilm,Bernhard Sell Symposium on VLSI Technology（2024）
Key words
High Cell Density
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