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Overcoming Performance Limitation of IGZO FET by Icvd Fluorine Doping

Seung Hyun Oh,Changhyeon Lee, Hee Tae Kim, Jeong Ik Park,Min Ju Kim, Se Jun Park,Sung Gap Im,Sung Haeng Cho,Byung Jin Cho

Symposium on VLSI Technology（2024）

Cited 0|Views3
Key words
Fluorine Doping,Threshold Voltage,Entire Channel,Fluorinated,Oxide Semiconductor,Gate Dielectric,Drain Current,Flash Memory,Dual Layer
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