Backside Power Distribution for Nanosheet Technologies Beyond 2Nm
Ruilong Xie, Wonhyuk Hong, Chen Zhang, Jongjin Lee,Kevin Brew,Richard Johnson,Nicholas A. Lanzillo,Hosadurga Shobha, Taesun Kim, Panjae Park,Shogo Mochizuki,Iqbal Saraf,Chanro Park, Lei Zhuang, Clifford Osborn, Wai Kin Li, Feng Liu,Muthumanickam Sankarapandian, Chung Ju Yang,Juntao Li, Lukas Tierney,Ruturaj Pujari,Yasir Sulehria, Yuncheng Song,Huimei Zhou,Miaomiao Wang,Michael Belyansky, Somnath Ghosh, Haojun Zhang,Koichi Motoyama, Debarghya Sarkar, Wukang Kim,Albert Chu, Tao Li,Fabio Carta,Oleg Gluschenkov, Joongsuk Oh, Matthew Malley, Pinlei Chu,Son Nguyen, Katherine Luedders,Joe Lee, Shahrukh Khan,Prabudhya Roy Chowdhury, Huai Huang, Abir Shadman,Stuart Sieg,Daniel Dechene,Daniel Edelstein,John Arnold,Tenko Yamashita,Kisik Choi,Kang-ill Seo,Dechao Guo,Huiming Bu Symposium on VLSI Technology（2024）
Key words
Power Distribution,Backside Power,Power Distribution Network,Cell Binding,Complete Removal,Front Side
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