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A New Method for Extracting Parasitic Capacitance of MOSFET in a Half-Bridge Configuration

2024 IEEE International Symposium on Electromagnetic Compatibility, Signal &ampamp Power Integrity (EMC+SIPI)(2024)

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关键词
Metal-oxide-semiconductor field effect transistor (MOSFET),silicon carbide (SiC),parasitic capacitance,half-bride configuration
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