High-Performance TiN/TaOx/TiN Selectors WithShort-Term Memory Characteristics
IEEE TRANSACTIONS ON ELECTRON DEVICES(2024)
关键词
Tin,Resistance,Switches,Tunneling,Stress,Performance evaluation,Programming,Fowler-Nordheim (FN) tunneling,selector,short-term memory (STM),varistor,Zener diode
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