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Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices

Sungman Rhee, Daewon Kim, Kyeongyeon Kim,Seongwook Choi,Byung-Gook Park,Young June Park

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2020）

Cited 5|Views7
Key words
Density-gradient model,second-order quantum correction,single-charge effect,sub-10-nm MOSFET device,quantum confinement
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