La0.8sr0.2(Ga0.8mg0.2)0.1(Nixco1-X)0.9o3-Δ Dense Diffusion Barrier Layer for Limiting Current Oxygen Sensor Prepared Using the Co-Pressing and Co-Sintering Technique
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING（2025）
关键词
Limiting current oxygen sensor,Dense diffusion barrier,Co-pressing and co-sintering technique,Ni and Co doping
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