Ge N-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer with Low Operating Voltage, Large Memory Window and Negligible Read Latency
IEEE ELECTRON DEVICE LETTERS（2024）
Key words
Germanium,FeFETs,Voltage,Iron,Electrons,Silicon,Hafnium oxide,Ge channel,ferroelectricity,HZO,charge trapping layer,hybrid memory,synapses
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