Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor with TiO $_{\text{2}}$ Interfacial Layer

Yan-Kui Liang, Li,Yu-Lon Lin,Dong-Ru Hsieh,Tsung-Ying Yang,Tsung-Te Chou,Chi-Chung Kei,Huai-Ying Huang,Yu-Ming Lin,Yuan-Chieh Tseng,Tien-Sheng Chao,Edward Yi Chang,Kasidit Toprasertpong,Shinichi Takagi,Chun-Hsiung Lin

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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关键词

Iron,Logic gates,Degradation,Dielectric constant,Switches,Thin film transistors,Annealing,Atomic layer deposition,ferroelectric (FE),FE thin-film transistor (FeTFT),InZnO,oxide semiconductor (OS),superlattice (SL)

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