Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation

Eros Reato,P. Palacios, J. A. Yang, S. Wahid,Marc Jaikissoon, J.-S. Ko,Alwin Daus, M. Saeed,Krishna C. Saraswat,Renato Negra,Eric Pop,Max Christian Lemme

Device Research Conference（2024）

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Polyimide,Chemical Vapor Deposition,Flexible System,Field-effect Transistors,Indium Tin Oxide,Channel Length,Gate Dielectric,Gate Length,RF Front-end,Electron Beam Lithography,Atomic Layer Deposition,Radio Frequency Devices

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