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Source/Drain Extension Asymmetric Counter-doping for Suppressing Channel Leakage in Stacked Nanosheet Transistors

Qingkun Li,Lei Cao,Qingzhu Zhang,Lianlian Li,Xuexiang Zhang,Chuqiao Niu,Guanqiao Sang,Yunjiao Bao,Huaxiang Yin,Zhenhua Wu

MICROELECTRONICS JOURNAL（2024）

Cited 1|Views3
Key words
Nanosheet FET,Gate-all-around (GAA),Source/drain extension (SDE),Asymmetric counter-doping,Channel leakage,3D TCAD simulation
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