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Capture Zone Scaling in 2d Ge Island Nucleation on Si(111)-(7×7) at Elevated Temperatures

A. A. Makeeva,A. S. Petrov,D. I. Rogilo,D. V. Sheglov,A. V. Latyshev

Journal of Crystal Growth（2024）

Cited 0|Views3
Key words
Nucleation,Surface processes,Growth models,Molecular beam epitaxy,Semiconducting germanium,Semiconducting silicon
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