Enhancing $\beta $-Ga$_{\text{2}}$o$_{\text{3}}$ Schottky Barrier Diodes’ Performance Through Low-Temperature Post-Annealing: Achieving Optimal Forward Current–Voltage Characteristics
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
ideality factor,beta-gallium oxide (beta-Ga2O3),ideality factor,post-annealing, power semiconductor devices,Schottkybarrier diode (SBD),semiconductor-metal interfaces
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