Monolithically Integrated >3kv, 20A 4H-Sic BiDFET Utilizing an Accumulation Mode Channel for Improved Output Characteristics
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）
关键词
4H SiC,Bi-Directional FET,Common Drain,Monolithically Integrated,Accumulation Channel,Channel Diode,Inversion Channel,> 3kV
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要