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Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation Using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-Sic MOSFET

Banu Poobalan, Nuralia Syahida Hashim,Manikandan Natarajan,Alhan Farhanah Abd Rahim

Journal of Engineering and Technological Sciences（2024）

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关键词
electron mobility,gate oxide thickness,gate voltage,resistance,silicon carbide
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