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Effect of Substrate Misorientation Angle on the Structural Properties of N-polar GaN Grown by Hot-Wall MOCVD on 4H-Sic(000(1)over-bar)

Hengfang Zhang,Jr. -Tai Chen,Alexis Papamichail,Ingemar Persson, Dat Q. Tran,Plamen P. Paskov, Vanya Darakchieva

JOURNAL OF CRYSTAL GROWTH（2025）

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Key words
N-polar GaN,epitaxial growth,SiC substrate misorientation angle,Multi-step temperature growth,MOCVD
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