Performances Analysis for Core–Shell Si/In$_{\textit{x}}$Ga$_{\text{1}-{\textit{x}}}$As FinFET
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
FinFETs,Silicon,Logic gates,Epitaxial growth,Doping,Substrates,Radio frequency,Core-shell,FinFET,InGaAs,technology computer-aided design (TCAD)
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