Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Zhe Chuan Feng,Jiamin Liu,Deng Xie,Manika Tun Nafisa,Chuanwei Zhang,Lingyu Wan, Beibei Jiang,Hao-Hsiung Lin,Zhi-Ren Qiu,Weijie Lu,Benjamin Klein,Ian T. Ferguson,Shiyuan Liu

Materials（2024）

引用 2|浏览5

关键词

gallium nitride (GaN),molecular beam epitaxy (MBE),high-resolution X-ray diffraction (HR-XRD),Nomarski microscopy (NM),Raman scattering,photoluminescence (PL),spectroscopic ellipsometry (SE),Urbach’s binding energy,synchrotron radiation (SR),near-edge X-ray absorption fine structure (NEXAFS)

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要