Enhancement-mode Ga2O3 FETs with Unintentionally Doped (001) Β-Ga2o3 Channel Layer Grown by Metal-Organic Chemical Vapor Deposition
JAPANESE JOURNAL OF APPLIED PHYSICS（2024）
关键词
MOCVD,FET,gallium oxide,homoepitaxy
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要