GaN-based Charge Trapping Memory with an AlN Interfacial Layer for Multi-State Operation
IEEE ELECTRON DEVICE LETTERS（2024）
Key words
Logic gates,III-V semiconductor materials,Aluminum nitride,Voltage measurement,Annealing,Performance evaluation,Interface states,Wide-bandgap semiconductor,p-GaN/ AlGaN/GaN heterojunction,non-volatile memory,charge trapping memory,analog state storage
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined