Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits’ Performance
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY（2024）
Key words
silicon-on-nothing (SON),air sub-fin,GAA FETs,backside selective etching (BSE),parasitic capacitance (Cpar)
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