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Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Zaoyang Lin,Xiangyu Wu,Daire Cott,Yuanyuan Shi,Henry Medina Silva,Stefanie Sergeant,Thierry Conard,Johan Meersschaut,Ankit Nalin Mehta,Benjamin Groven,Pierre Morin,Inge Asselberghs,Cesar Javier Lockhart de la Rosa,Gouri Sankar Kar,Dennis Lin,Annelies Delabie

ACS Applied Electronic Materials（2024）

Cited 1|Views22
Key words
molybdenum disulfide (MoS2),tungsten disulfide(WS2),atomic layer deposition (ALD),gadolinium aluminate,high-kappa dielectrics,field-effect transistor
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