Optimization of Void Defects at TiN/Si:HfO2 Interface for 3D Ferroelectric Memory
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING（2024）
关键词
Tin,Capacitors,Electrodes,Three-dimensional displays,Annealing,Scanning electron microscopy,Transmission electron microscopy,Void defects,3D ferroelectric capacitor,binding energy,interface layer
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