Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography
Semiconductor Science and Technology(2024)
摘要
Abstract The mean inner potential (MIP), V0, for a series of Zn group VI semiconductor nanostructures were measured experimentally using off-axis electron holography (EH). Values for ZnS, ZnTe and ZnO were remeasured and new values were added for ZnSe and ZnSSe nanowires. We confirm that the MIP increases non-linearly with
mass density beginning at 12.4 ± 0.2 V for the lowest density ZnS and slowly increasing with composition to
12.9 ± 0.2 V for ZnSe, more rapidly for ZnTe and with a significant increase to 14.8 ± 0.3 V for ZnO with the
highest density. Published results from DFT calculations compared well to these measurements with similar
trends apparent for other cation families such as the Ga-III-V.
更多查看译文
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要