Heterogenous InP Electro-Absorption Modulator with Si Waveguides for Beyond 200 Gbps/λ Optical Interconnects

Armands Ostrovskis, Krzysztof Szczerba,Toms Salgals, Erik Norberg,Michael Koenigsmann, John Sonkoly, Kristaps Rubuls, Han Yun, Benjamin Krüger,Molly Piels, Arvids Sedulis,Fabio Pittalà,Sandis Spolitis,Markus Gruen,Hadrien Louchet, Robert Jahn, Kazuo Yamaguchi,Vjaceslavs Bobrovs,Xiaodan Pang, Robert Guzzon,Oskars Ozolins

2024 Optical Fiber Communications Conference and Exhibition (OFC)（2024）

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摘要

We demonstrate an InP EAM with Si waveguides and achieve 256 Gbaud OOK, 170 Gbaud PAM4, 150 Gbaud PAM6, and 120 Gbaud PAM8 transmission over 500 meters of SMF below 6.25% OH HD-FEC threshold.

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关键词

Optical Interconnects,Si Waveguide,Electro-absorption Modulator,Single-mode Fiber,On-off Keying,Wide Temperature Range,Optical Power,Stringent Requirements,Bitrate,Keysight,Optical Amplifier,Tunable Laser,Digital Oscilloscope,Line Rate,Pulse Amplitude Modulation,Optical Link,Silicon Photonics,Modulation Formats,Symbol Rate,Eye Diagrams,Real-time Oscilloscope

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