Analysis of InGaAs/InP Single Photon Avalanche Diodes with Multiplication Width in Sub-Micron
IEEE Journal of Quantum Electronics(2024)
关键词
Single-photon avalanche diodes,Electric fields,Absorption,Indium phosphide,III-V semiconductor materials,Noise,Performance evaluation,InGaAs/InP,single-photon avalanche photodiodes (SPADs),time jitter,multiplication
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