Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L-BTBT induced GIDL

In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band tunneling in lateral direction (L-BTBT) which induced GIDL current. It is analyzed that increase in the nanotube thickness and physical oxide thickness increase the GIDL current, while increasing the gate electrode work function, core gate and outer gate thicknesses gives reduced GIDL current. The SiGe S/D NTJLFET produce a remarkable high I-ON/I-OFF ratio similar to 10(11). A compact model for GIDL current is also developed which shows the dependency of structure parameters on leakage current. The SiGe has been incorporated as source and drain in NTJLFET which creates the energy band discontinuity. Furthermore, SiGe S/D NTJLFET is fairly compared with the conventional NT JLFET and nanowire (NW) JLFET and shows an improved performance.