Field-Induced Hybridization of Moire Excitons in MoSe2/WS2 Heterobilayers

We study experimentally and theoretically the hybridization among intralayer and interlayer moire excitons in a MoSe2/WS2 heterostructure with antiparallel alignment. Using a dual -gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moire excitons in the MoSe2/WS2 heterostack to a perpendicular electric field, monitor the field-induced dispersion and hybridization of intralayer and interlayer moire exciton states, and induce a crossover from type I to type II band alignment. Moreover, we employ perpendicular magnetic fields to map out the dependence of the corresponding exciton Land e g factors on the electric field. Finally, we develop an effective theoretical model combining resonant and nonresonant contributions to moire potentials to explain the observed phenomenology, and highlight the relevance of interlayer coupling for structures with close energetic band alignment as in MoSe2/WS2.