Perovskite-Based Near-Infrared Photodetectors

In recent years, organo-metal halide perovskites materials with ABX3 crystal structure have shown promising application prospects in the field of photoelectric detection due to their optical and electrical properties such as adjustable bandgap engineering, high absorption coefficient and long carrier transmission distance. Especially, the hybrid perovskite prepared by pure Sn or Sn/Pb mixed cations have excellent near -infrared photoelectroresponse in the range of 760-1050 nm, showing many advantages such as high sensitivity, low dark current and high detection rate. To further broaden the near -infrared and infrared response wavelength range of perovskite, the researchers explored combining organic materials, crystalline silicon/germanium, III -V compounds, IV -VI compounds, upconversion fluorescent materials as complementary light absorption layers with perovskite to prepare heterostructures to construct wide -spectrum response near -infrared photodetectors. Based on the above research, this paper summarizes the current effective ways to broaden the spectrum range of perovskite photodetectors. At the same time, the future development prospect of perovskite material near infrared photodetector is prospected.