Vertically Aligned 2-D MoS2 based High Performance Humidity Sensor

Prajjwal Shukla,Rahul Gond, Prakhar Singh, Bhanu Prakash,Brajesh Rawat

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(2024)

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摘要
In this study, we present a humidity sensor based on vertically aligned molybdenum disulfide (MoS 2 ), which was fabricated by depositing a MoS 2 sensing layer using the chemical vapor deposition (CVD) method. The sensor exhibits a remarkable electrical response characterized by current modulation as the humidity level rises from 30% to 60% at room temperature. The device exhibits response times of approximately 690 seconds and achieves complete recovery at around 295 seconds with excellent repeatability at 50% relative humidity (RH). These results signify that CVD-grown vertically aligned MoS 2 -based sensors hold substantial promise for efficiently monitoring changes in humidity level, positioning them as strong candidates for more stable sensor development.
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关键词
2D MoS2,room temperature,humidity sensor,electrochemical sensor
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