Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

T. Chiarella,P. Matagne,H. Mertens,M. Hosseini, X. Zhou,P. Eyben,H. Arimura,A. Gupta,O. Richard,C. Drijbooms,R. Caluwaerts,N. Horiguchi,J. Mitard

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024（2024）

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关键词

Field-effect Transistors,Gate Pitch,Complementary Field-effect Transistor,Device Performance,Contact Resistance,Epitaxial Growth,Low Contact Resistance,Third Dimension,Access Resistance,Gate Length,Metal Work Function

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