Gate Leakage Current Analysis Using Bayesian Deconvolution for Accurate Electron/Hole Trapping Characterizations in 4H-Sic MOSFETs
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024（2024）
关键词
4H-SiC,hole traps,electron traps,gate leakage,trap characterization
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