Effect of annealing temperature on crystallographic texture, magnetic and microwave properties of barium ferrite thin films

Due to it has large saturation magnetization (Ms), high magnetocrystalline anisotropy field and high ferromagnetic resonance (FMR) frequency, barium ferrite (BaM) has attracted more and more attentions in the fields of magnetic recording media, permanent magnets and microwave devices. Here, BaM thin films were deposited on Pt/TiO _2 /SiO _2 /Si substrates, and the effect of annealing temperature on the microstructure, magnetic and microwave properties of barium ferrite thin films was investigated in detail. It is found that when the BaM thin film was annealed at 1035 °C, it has good properties. The XRD data provide clear evidence that the BaM thin films have high c-axis orientation, and the Lotgering factor is as high as 0.96. The AFM morphology show that BaM grains are out of the film plane, and they are hexagonal. The magnetic hysteresis curves indicated that both saturated magnetization (4 π Ms), remanence ratio and coercive (Hc) for out of plane increase with increasing Ta first, then decreased, and get the maximum value at 1035 °C. The ferromagnetic resonance (FMR) measurement show that the FMR linewidth is 143 Oe@50 GHz, it means that this this sample has low microwave loss in millimeter wave loss, and the FMR absorption can be tuned by applied magnetic field. These results make sure that this BaM thin film is possible use in millimeter wave devices such as filers, circulators and isolators.