Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes

Samuel K. Atwimah,Tolen Nelson,Prakash Pandey, Aidan P. Fox,Daniel G. Georgiev,Alan G. Jacobs,Andrew D. Koehler,Karl D. Hobart,Travis J. Anderson,Raghav Khanna

2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC（2024）

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Key words

gallium nitride,III-V semiconductors,wide band gap semiconductors,TCAD,behavioural modeling,vertical GaN diode,merged PN-Schottky diode,double pulse test,reverse recovery,mixedmode simulation

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