High light utilization of double-layer InxGa1−xN heterojunction nanowire array photocathodes

We propose a photocathode structure based on InxGa1−xN heterojunction nanowire array to enhance solar energy utilization efficiency. Compared with single-component InGaN nanowires, heterojunction nanowires can achieve higher effective quantum efficiency through the introduction of built-in electric field. This means that it has higher actual performance than previous studies. The maximum effective quantum efficiency of 300 nm-300 nm In0.5Ga0.5N-In0.57Ga0.43N heterojunction nanowires can reach 40.8 % when the incident light is obliquely incident at an angle of 70°. In addition, the external electric field can significantly help the heterojunction nanowires maintain higher actual performance over a longer wavelength range. This research is expected to provide theoretical support for the development and performance improvement of high-performance solar photocathode.