Lateral Heterostructure Formed by Highly Thermally Conductive Fluorinated Graphene for Efficient Device Thermal Management

The continued miniaturization of chips demands highly thermally conductive materials and effective thermal management strategies. Particularly, the high-field transport of the devices built with 2D materials is limited by self-heating. Here a systematic control of heat flow in single-side fluorinated graphene (FG) with varying degrees of fluorination is reported, revealing a superior room-temperature thermal conductivity as high as 128 W m-1 K-1. Monolayer graphene/FG lateral heterostructures with seamless junctions are approached for device fabrication. Efficient in-plane heat removal paths from graphene channel to side FG are created, contributing significant reduction of the channel peak temperature and improvement in the current-carrying capability and power density. Molecular dynamics simulations indicate that the interfacial thermal conductance of the heterostructure is facilitated by the high degree of overlap in the phonon vibrational spectra. The findings offer novel design insights for efficient heat dissipation in micro- and nanoelectronic devices. Seamless graphene/fluorinated graphene lateral heterostructure is fabricated to improve heat dissipation efficiency in transistor devices. Benefiting from the highly thermally conductive and electrically insulating monolayer fluorinated graphene, efficient in-plane heat removal paths from graphene channel to side fluorinated graphene are created. Channel peak temperature in device is significantly reduced, leading to superior current-carrying capability. image