Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer
arxiv(2024)
摘要
Thermal boundary resistance (TBR) in semiconductor-on-diamond structure
bottlenecks efficient heat dissipation in electronic devices. In this study, to
reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid
SiOx-Ar ion source was applied to achieve an ultrathin interfacial layer. The
simultaneous surface activation and slow deposition of the SiOx binder layer
enabled precise control over layer thickness (2.5-5.3 nm) and formation of an
amorphous heterogeneous nanostructure comprising a SiOx region between two
inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved
a TBR of 8.3 m2-W/GW, a record low for direct-bonded GaN/diamond interface. A
remarkable feature is that the TBR is extremely sensitive to the interfacial
thickness; rapidly increasing to 34 m2-K/GW on doubling the thickness to 5.3
nm. Theoretical analysis revealed the origin of this increase: a diamond/SiOx
interdiffusion layer extend the vibrational frequency, far-exceeding that of
crystalline diamond, which increases the lattice vibrational mismatch and
suppresses phonon transmission.
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