Resistance Switching and Carrier Transport Mechanisms of HfO $_{\text{2}}$ -Based Ferroelectric Diode
IEEE Transactions on Electron Devices(2024)
关键词
Switches,Resistance,Current measurement,Electrical resistance measurement,Fitting,Hafnium oxide,Electrons,Carrier transport mechanisms,ferroelectric diode (FD),switching mechanisms
AI 理解论文
溯源树
样例

生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要