A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET

A human-body-model (HBM) electrostatic discharge (ESD) simulator using a SiC MOSFET as the main switch is realized, verified and applied. Compared with the electromechanical relay used in the conventional simulator, the SiC MOSFET presents no restriction from the mechanical contact, smaller size and lower cost. The SiC MOSFET enables a 3.3-ns rise time of the ESD current and a 2-kV ESD voltage, leading to a high-speed and high-voltage HBM ESD simulator. The proposed ESD simulator is verified by the current waveform specified in the JEDEC standard and by comparing the measured results with those from a standard simulator. Using the new simulator, the ESD robustness of Schottky-type p-GaN gate HEMTs is evaluated. The dominant factors for ESD robustness are identified from the dynamic discharge processes.