Titanium oxynitride thin films by the reactive sputtering process with an independent pulsing of O2 and N2 gases

Titanium oxynitride thin films are deposited by DC reactive magnetron sputtering. A pure titanium target is sputtered in a reactive atmosphere composed of argon, oxygen and nitrogen gases. The oxygen mass flow rate as well as that of the nitrogen gas are both pulsed during the deposition time using an independent and rectangular signal for each reactive gas. A constant pulsing period T = 45 s is applied for both reactive gases and a delay time δ of 34 s between N2 and O2 injection times is set for all depositions. Oxygen and nitrogen duty cycles are systematically and independently changed from 0 to 100% of their pulsing period. From real time measurements of the Ti target potential and total sputtering pressure, it is shown that the reactive process alternates between oxidized, nitrided and elemental sputtering modes as a function of the oxygen and nitrogen injection times. The full poisoning of the Ti target surface by oxygen and/or nitrogen can be avoided for some given ranges of O2 and N2 duty cycles. Deposition rates of titanium oxynitride films are substantially enhanced and can be adjusted between that of pure Ti and TiN films with a gradual transition of their electrical conductivity and optical transmittance in the visible range. These results support that titanium oxynitride compounds exhibiting absorbent to transparent behaviors can be precisely sputter-deposited by means of a two reactive gases pulsing process.