High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs with N2O Oxidation Treatment
IEEE ELECTRON DEVICE LETTERS（2024）
关键词
Oxidation,Logic gates,Linearity,MODFETs,HEMTs,III-V semiconductor materials,Aluminum nitride,AlN,GaN,coupling-channel,high electron mobility transistor (HEMT),linearity,low leakage,OIP3/PDC
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