Microstructure and optical properties of β-Ga2O3 thin films fabricated by pulsed laser deposition

β-Ga2O3 has attracted extensive attention in the fields of optoelectronics and high-power electric devices due to its excellent electrical properties and thermal stability. Growth of epitaxial β-Ga2O3 films with good crystallinity is challenging since it is difficult to effectively control the impurities in the films. Here, β-Ga2O3 thin films were epitaxially grown on MgO (100) substrates via pulsed laser deposition system. The microstructure and optical properties of the β-Ga2O3 thin films were systematically characterized by combining high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet–visible spectrophotometer and advanced transmission electron microscopy. Effects of the growth temperature and O2 partial pressure on the crystallinity, valance states of Ga ions and band gap of the β-Ga2O3 thin films were investigated. The light absorption wavelength of the β-Ga2O3 thin films ranges from 220 nm to 260 nm, which is close to the theoretical value. The epitaxial orientation between β-Ga2O3 film and MgO substrate is β-Ga2O3 (100) [02¯1] // MgO (100) [010]. A thin layer of γ-Ga2O3 exists in the interfacial region.