Characteristics Study of Heterojunction III-Nitride/β-Ga2O3 Nano-HEMT for THz Applications

Abstract In this research study, a recessed gate III-Nitride high electron mobility transistor (HEMT) grown on a lattice-matched β-Ga2O3 substrate is designed. This research investigation aims to enhance the DC and RF performance of AlGaN/GaN HEMT and minimize the short-channel effects by incorporating an AlGaN back layer and field plate technique, which can enhance electron confinement in two-dimensional electron gas (2DEG). A precise comparison analysis is done on the proposed HEMT’s input characteristics, output characteristics, leakage current characteristics, breakdown voltage properties, and RF behavior in the presence and absence of AlGaN back layer in regards to field plate configuration. The inclusion of the back barrier aids in raising the level of the conduction band, which reduces leakage loss beneath the buffer, and aids in keeping the 2DEG confined to a narrow channel. Furthermore, the field plate design offers an essential electric field drift between the gate and drain, resulting in enhanced breakdown voltage characteristics.