Quantum graph models for transport in filamentary switching
arxiv(2024)
摘要
The formation of metallic nanofilaments bridging two electrodes across an
insulator is a mechanism for resistive switching. Examples of such phenomena
include atomic synapses, which constitute a distinct class of memristive
devices whose behavior is closely tied to the properties of the filament. Until
recently, experimental investigation of the low-temperature regime and quantum
transport effects has been limited. However, with growing interest in
understanding the true impacts of the filament on device conductance,
comprehending quantum effects has become crucial for quantum neuromorphic
hardware. We discuss quantum transport resulting from filamentary switching in
a narrow region where the continuous approximation of the contact is not valid,
and only a few atoms are involved. In this scenario, the filament can be
represented by a graph depicting the adjacency of atoms and the overlap between
atomic orbitals. Using quantum graphs, we calculate the scattering amplitude of
charge carriers on this graph and explore the interplay between filamentary
formation and quantum transport effects.
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