Synthesis of the 2D Ternary Topological Insulator Bi_2‐xSb_xSe₃ with a Low Carrier Concentration and Ultrahigh Carrier Mobility

AbstractHighcarrier concentration and low mobility in Bi2Se3 hide thetopological surface states (TSS). In the 2D ternary topological insulator (TI) Bi2–xSbxSe3,compensatory Sb doping regulates the carrier concentration and mobility withambipolar performance, together with the ultrathin thickness; these factorsmake the TSS in the 2D ternary TI Bi2–xSbxSe3 more observable. Here, a chemical vapor deposition (CVD) method is provided for synthesizing ultrathin Sb‐doped Bi2Se3 nanoplates with dimensions of 2–126 nm in thickness, 3–100 µm in lateral size, and an average Sb doping ranging from 0.15 ≤ x ≤ 0.75. Bi2–xSbxSe3 field effect transistors and Hall devices are manufactured to determine the carrier concentration and mobility of the obtained Bi2–xSbxSe3 nanoplates. These findings demonstrate that the 2D carrier concentration for Bi2–xSbxSe3 nanoplates can decrease up to 1.6 × 1012 cm–2. Furthermore, field‐effect mobility and Hall mobility of up to 3411 cm2 V–1s–1 and 6462 cm2 V–1 s–1, respectively, are realized. A strong ambipolar field effect is found in low‐carrier‐density Bi2–xSbxSe3 nanoplates, proving that these nanostructures may be freely controlled in terms of carrier type and concentration. The synthesis of high‐quality Bi2–xSbxSe3 nanoplates with low‐carrier concentration and high‐mobility provides a platform for investigating TI characteristics more clearly.