Precise and smooth structure on InP fabricated by femtosecond laser direct writing-assisted wet etching

We report a method for preparing high-precision microstructures based on near-infrared femtosecond laser direct writing-assisted wet etching on InP without mask. The relationship between the structure of femtosecond laser processing and the laser pulse energy and number of pulses is systematically investigated. By controlling the single pulse energy and the number of pulses to obtain different femtosecond laser energy accumulations for InP processing, the femtosecond laser processing parameters were precisely varied to achieve the purpose of laser modification and ablation. The laser-processed areas were wet-etched using a mixture of hydrofluoric acid solution and hydrochloric tartaric acid under the same conditions. To obtain different processing pattern morphology by adjusting the etching time, and to analyze the reasons for the formation of morphology. By controlling the parameters of femtosecond laser processing parameters and wet etching parameters, micrometer-scale quasi-3D structural patterns on InP were realized. We analyzed the resulting surface morphology, and the preparation of micrometer scale quasi-three-dimensional structural patterns on InP was achieved by controlling femtosecond laser processing and wet etching parameters. This method of femtosecond laser direct writing combined with wet etching to prepare high-precision microstructures may expand the applications of InP in the fields of microelectronics and MEMS.