Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers.Haochen Zhang,Yue Sun,Kunpeng Hu,Lei Yang,Kun Liang,Zhanyong Xing,Hu Wang,Mingshuo Zhang,Huabin Yu,Shi Fang,Yang Kang,Haiding SunSci. China Inf. Sci.(2023)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要